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1

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Betz, A. C., Tagliaferri, M. L. V., Vinet, M., Broström, M., Sanquer, M., Ferguson, A. J., Gonzalez-Zalba, M. F.

Journal:

Applied Physics Letters

Year:

2016

Language:

english

File:

PDF, 653 KB

english, 2016

2

Radio-Frequency Capacitive Gate-Based Sensing

Ahmed, Imtiaz, Haigh, James A., Schaal, Simon, Barraud, Sylvain, Zhu, Yi, Lee, Chang-min, Amado, Mario, Robinson, Jason W. A., Rossi, Alessandro, Morton, John J. L., Gonzalez-Zalba, M. Fernando

Journal:

Physical Review Applied

Year:

2018

Language:

english

File:

PDF, 2.38 MB

english, 2018

3

Electric-field tuning of the valley splitting in silicon corner dots

Ibberson, D. J., Bourdet, L., Abadillo-Uriel, J. C., Ahmed, I., Barraud, S., Calderón, M. J., Niquet, Y.-M., Gonzalez-Zalba, M. F.

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 1.44 MB

english, 2018

4

Small-signal equivalent circuit for double quantum dots at low-frequencies

Esterli, M., Otxoa, R. M., Gonzalez-Zalba, M. F.

Journal:

Applied Physics Letters

Year:

2019

Language:

english

File:

PDF, 1.24 MB

english, 2019

5

High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors

Betz, A. C., Barraud, S., Wilmart, Q., Plaçais, B., Jehl, X., Sanquer, M., Gonzalez-Zalba, M. F.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.77 MB

english, 2014

6

Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots

Gonzalez-Zalba, M.F., Galibert, J., Iacovella, F., Williams, D., Ferrus, T.

Journal:

Current Applied Physics

Year:

2014

Language:

english

File:

PDF, 544 KB

english, 2014

7

An Exchange-Coupled Donor Molecule in Silicon

Gonzalez-Zalba, M. F., Saraiva, André, Calderón, María J., Heiss, Dominik, Koiller, Belita, Ferguson, Andrew J.

Journal:

Year:

2014

Language:

english

File:

PDF, 1.55 MB

english, 2014

8

The role of underwater cultural heritage on dark matter searches: Ancient lead, a dual perspective

Perez-Alvaro, E., Gonzalez-Zalba, M.F.

Journal:

Ocean & Coastal Management

Year:

2015

Language:

english

File:

PDF, 281 KB

english, 2015

9

Tunable aluminium-gated single electron transistor on a doped silicon-on-insulator etched nanowire

Gonzalez-Zalba, M. F., Heiss, D., Podd, G., Ferguson, A. J.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.52 MB

english, 2012

10

Ambipolar quantum dots in intrinsic silicon

Betz, A. C., Gonzalez-Zalba, M. F., Podd, G., Ferguson, A. J.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1015 KB

english, 2014

11

Probing the limits of gate-based charge sensing

Gonzalez-Zalba, M. F., Barraud, S., Ferguson, A. J., Betz, A. C.

Journal:

Nature Communications

Year:

2015

Language:

english

File:

PDF, 576 KB

english, 2015

12

Hybrid optical–electrical detection of donor electron spins with bound excitons in silicon

Lo, C. C., Urdampilleta, M., Ross, P., Gonzalez-Zalba, M. F., Mansir, J., Lyon, S. A., Thewalt, M. L. W., Morton, J. J. L.

Journal:

Nature Materials

Year:

2015

Language:

english

File:

PDF, 830 KB

english, 2015

13

A hybrid double-dot in silicon

Fernando Gonzalez-Zalba, M, Heiss, Dominik, Ferguson, Andrew J

Journal:

New Journal of Physics

Year:

2012

Language:

english

File:

PDF, 1.78 MB

english, 2012

14

Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor

Betz, A. C., Wacquez, R., Vinet, M., Jehl, X., Saraiva, A. L., Sanquer, M., Ferguson, A. J., Gonzalez-Zalba, M. F.

Journal:

Year:

2015

Language:

english

File:

PDF, 2.27 MB

english, 2015

15

Erratum: “Ambipolar quantum dots in intrinsic silicon” [Appl. Phys. Lett. 105, 153113 (2014)]

Betz, A. C., Gonzalez-Zalba, M. F., Podd, G., Ferguson, A. J.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 35 KB

english, 2014

16

AIP Conference Proceedings [AIP THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 - Zurich, Switzerland (29 July–3 August 2012)] - A hybrid double-dot in silicon

Gonzalez-Zalba, M. F., Heiss, D., Ferguson, A. J.

Year:

2013

Language:

english

File:

PDF, 1.77 MB

english, 2013

17

[IEEE 2014 Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2014.6.8-2014.6.9)] 2014 Silicon Nanoelectronics Workshop (SNW) - A single-molecule transistor in silicon

Gonzalez-Zalba, M. Fernando, Saraiva, Andre, Calderon, Maria J., Heiss, Dominik, Koiller, Belita, Ferguson, Andrew J.

Year:

2014

Language:

english

File:

PDF, 178 KB

english, 2014

18

Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon

Urdampilleta, Matias, Chatterjee, Anasua, Lo, Cheuk Chi, Kobayashi, Takashi, Mansir, John, Barraud, Sylvain, Betz, Andreas C., Rogge, Sven, Gonzalez-Zalba, M. Fernando, Morton, John J. L.

Journal:

Physical Review X

Year:

2015

Language:

english

File:

PDF, 478 KB

english, 2015

19

Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor

Rossi, A., Zhao, R., Dzurak, A. S., Gonzalez-Zalba, M. F.

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 1.36 MB

english, 2017

20

Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system

Kobayashi, T., van der Heijden, J., House, M. G., Hile, S. J., Asshoff, P., Gonzalez-Zalba, M. F., Vinet, M., Simmons, M. Y., Rogge, S.

Journal:

Applied Physics Letters

Year:

2016

Language:

english

File:

PDF, 1.86 MB

english, 2016

21

Quantum and tunneling capacitance in charge and spin qubits

Mizuta, R., Otxoa, R. M., Betz, A. C., Gonzalez-Zalba, M. F.

Journal:

Physical Review B

Year:

2017

Language:

english

File:

PDF, 607 KB

english, 2017

22

A silicon-based single-electron interferometer coupled to a fermionic sea

Chatterjee, Anasua, Shevchenko, Sergey N., Barraud, Sylvain, Otxoa, Rubén M., Nori, Franco, Morton, John J. L., Gonzalez-Zalba, M. Fernando

Journal:

Physical Review B

Year:

2018

Language:

english

File:

PDF, 956 KB

english, 2018

23

Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

Schaal, S., Barraud, S., Morton, J. J. L., Gonzalez-Zalba, M. F.

Journal:

Physical Review Applied

Year:

2018

Language:

english

File:

PDF, 757 KB

english, 2018

24

Reconfigurable Boolean Logic Using Magnetic Single-Electron Transistors

Gonzalez-Zalba, M. Fernando, Ciccarelli, Chiara, Zarbo, Liviu P., Irvine, Andrew C., Campion, Richard C., Gallagher, Bryan L., Jungwirth, Tomas, Ferguson, Andrew J., Wunderlich, Joerg, Lisesivdin, Sef

Journal:

Year:

2015

Language:

english

File:

PDF, 372 KB

english, 2015

25

Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

Ahmed, Imtiaz, Chatterjee, Anasua, Barraud, Sylvain, Morton, John J. L., Haigh, James A., Gonzalez-Zalba, M. Fernando

Journal:

Communications Physics

Year:

2018

Language:

english

File:

PDF, 809 KB

english, 2018

26

Gate-based single-shot readout of spins in silicon

West, Anderson, Hensen, Bas, Jouan, Alexis, Tanttu, Tuomo, Yang, Chih-Hwan, Rossi, Alessandro, Gonzalez-Zalba, M. Fernando, Hudson, Fay, Morello, Andrea, Reilly, David J., Dzurak, Andrew S.

Journal:

Nature Nanotechnology

Year:

2019

Language:

english

File:

PDF, 3.11 MB

english, 2019

27

Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices

Ibberson, David J., Ibberson, Lisa A., Smithson, Geoff, Haigh, James A., Barraud, Sylvain, Gonzalez-Zalba, M. Fernando

Journal:

Applied Physics Letters

Year:

2019

File:

PDF, 1.69 MB

2019

28

Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices

Ibberson, David J., Ibberson, Lisa A., Smithson, Geoff, Haigh, James A., Barraud, Sylvain, Gonzalez-Zalba, M. Fernando

Journal:

Applied Physics Letters

Year:

2019

Language:

english

File:

PDF, 1.69 MB

english, 2019

29

[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

Hutin, L., Lundberg, T., Chatterjee, A., Crippa, A., Li, J., Maurand, R., Jehl, X., Sanquer, M., Gonzalez-Zalba, M. F., Kuemmeth, F., Niquet, Y.-M., Bertrand, B., De Franceschi, S., Urdampilleta, M.,

Year:

2019

File:

PDF, 1.25 MB

2019

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